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| AP9997GK RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Lower Gate Charge Fast Switching Characteristic D SOT-223 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S 100V 120m 3.2A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 100 +20 3.2 2.6 20 2.8 -55 to 150 -55 to 150 Units V V A A A W Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 45 Unit /W Data and specifications subject to change without notice 1 201006153 AP9997GK Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=3A VGS=4.5V, ID=2A Min. 100 1 - Typ. 3 14 1.5 5.5 4.5 7 18 6 450 65 50 Max. Units 120 200 3 25 100 100 22 720 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=80V, VGS=0V VDS=80V ,VGS=0V VGS= +20V, VDS=0V ID=3A VDS=80V VGS=10V VDS=50V ID=1A RG=3.3,VGS=10V RD=50 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=1.5A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/s Min. - Typ. 39 62 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 120 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 2 AP9997GK 20 20 T A =25 o C 16 ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T A =150 o C 16 10V 7.0V 5.0V 4.5V 12 12 8 8 4 V G =3.0V 4 V G =3.0V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 140 2.4 ID=2A 130 T A =25 o C 2.0 ID=3A V G =10V RDS(ON) (m) 120 Normalized RDS(ON) 1.6 110 1.2 100 0.8 90 20 80 2 4 6 8 10 0.4 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 10 1.6 8 1.4 6 IS (A) T j =150 C o T j =25 C o VGS(th) (V) 1.2 1.2 4 1 2 0.8 0 0 0.4 0.8 0.6 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9997GK f=1.0MHz 12 10000 10 VGS , Gate to Source Voltage (V) I D =3A V DS =80V 8 1000 C (pF) 6 C iss 4 100 C oss C rss 2 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 0.2 Operation in this area limited by RDS(ON) 0.1 0.1 ID (A) 1 100us 1ms 0.05 0.02 0.01 PDM 0.01 Single Pulse 0.1 10ms 100ms T A =25 o C Single Pulse 1s DC t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 120/W 0.01 0.01 0.1 1 10 100 0.001 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 |
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